SST214 SOT-143 4L

SST214 SOT-143 4L
Attribute
Description
Manufacturer Part Number
SST214 SOT-143 4L
Description
HIGH SPEED N-CHANNEL LATERAL DMO
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Stock:
5932

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
3000 ₹ 215.43 ₹ 6,46,290.00
500 ₹ 247.83 ₹ 1,23,915.00
100 ₹ 251.98 ₹ 25,198.00
10 ₹ 350.13 ₹ 3,501.30
1 ₹ 523.32 ₹ 523.32

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line SST214
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)
Availability Status Active
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 20 V
Continuous Drain Current at 25C 50mA (Ta)
Gate Drive Voltage Range 5V, 25V
Max On-State Resistance 50Ohm @ 1mA, 10V
Max Threshold Gate Voltage 1.5V @ 1µA
Max Gate Charge at Vgs -
Maximum Gate Voltage ±40V
Max Input Cap at Vds -
Transistor Special Function -
Max Heat Dissipation 300mW (Ta)
Ambient Temp Range -55°C ~ 125°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type SOT-143-4
Component Housing Style TO-253-4, TO-253AA

Description

Supports a continuous drain current (Id) of 50mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 5V, 25V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 125°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT) for component protection or transport. Enclosure/case TO-253-4, TO-253AA providing mechanical and thermal shielding. Enclosure type SOT-143-4 ensuring device integrity. Highest power dissipation 300mW (Ta) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 50Ohm @ 1mA, 10V for MOSFET criteria. Product or component classification series SST214. Manufacturer package type SOT-143-4 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±40V for MOSFET parameters. Peak Vgs(th) at Id 1.5V @ 1µA for MOSFET threshold level.

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