GV500-T8

GV500-T8
Attribute
Description
Manufacturer Part Number
GV500-T8
Description
PHOTODIODE, GE, 800NM ~ 1700NM,
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Active
Light Wavelength nm 850nm ~ 1550nm
Vivid Color Option Infrared (NIR)
Light Spectrum Coverage 850nm ~ 1650nm
Semiconductor Diode Category PIN
Sensitivity at Wavelength 0.85 A/W @ 1550nm
Activation Speed ms -
Max Reverse DC Voltage 0.3 V
Typical Dark Current 5µA
Functional Surface Area 3.00mm Dia
Display View Cone Degrees -
Ambient Temp Range -40°C ~ 85°C
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style -
Component Housing Style TO-8

Description

Boasts an active display region of 3.00mm Dia for enhanced visibility. Features improved color rendering rated at Infrared (NIR) for superior appearance. Features a typical dark current measured at 5µA. Includes diode type indicated as PIN. Utilizes Infrared (NIR) type of illumination for ideal lighting. Operating temperature -40°C ~ 85°C for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case TO-8 providing mechanical and thermal shielding. Product condition Active for availability and lifecycle. Sensitivity at wavelength 0.85 A/W @ 1550nm for optical sensing. Spectral range 850nm ~ 1650nm for lighting or sensor use. Highest DC reverse voltage 0.3 V for diodes. Light wavelength 850nm ~ 1550nm for RF or optical instruments.

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