Stock: 294
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 163.05 | ₹ 4,89,150.00 |
| 100 | ₹ 167.14 | ₹ 16,714.00 |
| 10 | ₹ 179.42 | ₹ 1,794.20 |
| 1 | ₹ 489.50 | ₹ 489.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | Lightning | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | SiCFET (Silicon Carbide) | |
| Drain-Source Breakdown Volts | 650 V | |
| Continuous Drain Current at 25C | 15A (Tc) | |
| Gate Drive Voltage Range | 15V | |
| Max On-State Resistance | 150mOhm @ 5A, 15V | |
| Max Threshold Gate Voltage | 2V @ 8mA | |
| Max Gate Charge at Vgs | 29.5 nC @ 12 V | |
| Maximum Gate Voltage | 15V | |
| Max Input Cap at Vds | 672 pF @ 400 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 68W (Tc) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | 4-PDFN (8x8) | |
| Component Housing Style | 4-PowerTSFN |
Description
Supports a continuous drain current (Id) of 15A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650 V. Accommodates drive voltage specified at 15V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 29.5 nC @ 12 V gate charge at Vgs for enhanced switching efficiency. Upholds 29.5 nC @ 12 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 672 pF @ 400 V at Vds for safeguarding the device. The input capacitance is rated at 672 pF @ 400 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 4-PowerTSFN providing mechanical and thermal shielding. Enclosure type 4-PDFN (8x8) ensuring device integrity. Highest power dissipation 68W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 29.5 nC @ 12 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 150mOhm @ 5A, 15V for MOSFET criteria. Product or component classification series Lightning. Manufacturer package type 4-PDFN (8x8) for component choice. Platform technology SiCFET (Silicon Carbide) for the type of product. Peak Vgs 15V for MOSFET parameters. Peak Vgs(th) at Id 2V @ 8mA for MOSFET threshold level.
