FF17900J-7

FF17900J-7
Attribute
Description
Manufacturer Part Number
FF17900J-7
Manufacturer
Description
SICFET N-CH 1700V 4.5A TO-263-7L
Note : GST will not be applied to orders shipping outside of India

Stock:
290

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
4000 ₹ 138.04 ₹ 5,52,160.00
100 ₹ 141.51 ₹ 14,151.00
10 ₹ 151.83 ₹ 1,518.30
1 ₹ 413.85 ₹ 413.85

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line Falcon
IC Encapsulation Type Tape & Reel (TR)
Availability Status Active
Field Effect Transistor Type N-Channel
Core Technology Platform SiCFET (Silicon Carbide)
Drain-Source Breakdown Volts 1700 V
Continuous Drain Current at 25C 4.5A (Tc)
Gate Drive Voltage Range 18V
Max On-State Resistance 1.5Ohm @ 500mA, 18V
Max Threshold Gate Voltage 2.5V @ 1mA
Max Gate Charge at Vgs 19 nC @ 15 V
Maximum Gate Voltage 18V
Max Input Cap at Vds 266 pF @ 1.2 kV
Transistor Special Function -
Max Heat Dissipation 83W (Tc)
Ambient Temp Range -55°C ~ 175°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type D2PAK-7L
Component Housing Style TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Description

Supports a continuous drain current (Id) of 4.5A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 1700 V. Accommodates drive voltage specified at 18V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 19 nC @ 15 V gate charge at Vgs for enhanced switching efficiency. Upholds 19 nC @ 15 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 266 pF @ 1.2 kV at Vds for safeguarding the device. The input capacitance is rated at 266 pF @ 1.2 kV at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA providing mechanical and thermal shielding. Enclosure type D2PAK-7L ensuring device integrity. Highest power dissipation 83W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 19 nC @ 15 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.5Ohm @ 500mA, 18V for MOSFET criteria. Product or component classification series Falcon. Manufacturer package type D2PAK-7L for component choice. Platform technology SiCFET (Silicon Carbide) for the type of product. Peak Vgs 18V for MOSFET parameters. Peak Vgs(th) at Id 2.5V @ 1mA for MOSFET threshold level.

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