EPC320-CSP16-001

EPC320-CSP16-001
Attribute
Description
Manufacturer Part Number
EPC320-CSP16-001
Manufacturer
Description
SENSOR PHOTODIODE 850NM 16XFBGA
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Light Wavelength nm 850nm
Vivid Color Option Infrared (NIR)/Red
Light Spectrum Coverage 400nm ~ 1030nm
Semiconductor Diode Category -
Sensitivity at Wavelength 0.6 A/W @ 850nm
Activation Speed ms 300ns
Max Reverse DC Voltage 20 V
Typical Dark Current 320pA
Functional Surface Area 3.42mm²
Display View Cone Degrees 150°
Ambient Temp Range -40°C ~ 85°C
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 16-XFBGA, CSPBGA

Description

Boasts an active display region of 3.42mm² for enhanced visibility. Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Features improved color rendering rated at Infrared (NIR)/Red for superior appearance. Features a typical dark current measured at 320pA. Utilizes Infrared (NIR)/Red type of illumination for ideal lighting. Mounting style Surface Mount for structural integrity. Operating temperature -40°C ~ 85°C for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 16-XFBGA, CSPBGA providing mechanical and thermal shielding. Product condition Obsolete for availability and lifecycle. Response duration 300ns for quick operation or detection. Sensitivity at wavelength 0.6 A/W @ 850nm for optical sensing. Spectral range 400nm ~ 1030nm for lighting or sensor use. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Angle of view 150° for displays. Highest DC reverse voltage 20 V for diodes. Light wavelength 850nm for RF or optical instruments.

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