Stock: 5
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100 | ₹ 489.50 | ₹ 48,950.00 |
| 10 | ₹ 534.00 | ₹ 5,340.00 |
| 5 | ₹ 623.00 | ₹ 3,115.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | SiCFET (Silicon Carbide) | |
| Drain-Source Breakdown Volts | 1200 V | |
| Continuous Drain Current at 25C | 12A (Ta) | |
| Gate Drive Voltage Range | 15V | |
| Max On-State Resistance | 135mOhm @ 10A, 15V | |
| Max Threshold Gate Voltage | 3.2V @ 5mA | |
| Max Gate Charge at Vgs | 40 nC @ 15 V | |
| Maximum Gate Voltage | +15V, -5V | |
| Max Input Cap at Vds | 1810 pF @ 200 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 100W (Tc) | |
| Ambient Temp Range | -40°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-247 | |
| Component Housing Style | TO-247-4 |
Description
Supports a continuous drain current (Id) of 12A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 1200 V. Accommodates drive voltage specified at 15V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 40 nC @ 15 V gate charge at Vgs for enhanced switching efficiency. Upholds 40 nC @ 15 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1810 pF @ 200 V at Vds for safeguarding the device. The input capacitance is rated at 1810 pF @ 200 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -40°C ~ 175°C (TJ) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case TO-247-4 providing mechanical and thermal shielding. Enclosure type TO-247 ensuring device integrity. Highest power dissipation 100W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 40 nC @ 15 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 135mOhm @ 10A, 15V for MOSFET criteria. Manufacturer package type TO-247 for component choice. Platform technology SiCFET (Silicon Carbide) for the type of product. Peak Vgs +15V, -5V for MOSFET parameters. Peak Vgs(th) at Id 3.2V @ 5mA for MOSFET threshold level.
