CP-AD-819
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Obsolete | |
| Connection Adapter Style | Jack to Jack | |
| Signal Transformation Style | Between Series | |
| Adapter Product Line | SMA to N | |
| Core Connector Polarity | Female to Female | |
| Source Adapter Interface | N Jack, Female Socket | |
| Target Adapter Interface | SMA Jack, Female Socket | |
| AC Resistance Value | 50 Ohms | |
| Design Style Variant | Straight | |
| Attachment Mounting Style | Free Hanging (In-Line) | |
| Installation Mount Type | - | |
| Secure Attachment Method | Threaded, Threaded | |
| Upper Frequency Limit | 11 GHz | |
| Dust Water Resistance Rating | - | |
| Central Pin Coating | Gold | |
| Key Product Highlights | - |
Description
Belongs to the SMA to N series for system integration. Accommodates a Jack to Jack adapter type for effective interface conversion. Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Incorporates plating of Gold on the center contact to enhance conductivity. Set up with center contact gender Female to Female. Facilitates conversion type characterized as Between Series. Engineered to convert from adapter end rated at N Jack, Female Socket. Transforms to adapter end indicated as SMA Jack, Female Socket. Employs fastening type identified as Threaded, Threaded. Provides a maximum frequency of 11 GHz. Set with 50 Ohms impedance to ensure signal integrity. Mounting style Free Hanging (In-Line) for structural integrity. Enclosure Bulk for component protection or transport. Product condition Obsolete for availability and lifecycle. Style Straight for design or arrangement. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters.
