Attribute
Description
Manufacturer Part Number
CGD65C055SP2
Manufacturer
Description
650V GAN HEMT,
55 MOHM,
27A,
BHD
Note :
GST will not be applied to orders shipping outside of India
Stock: 1496
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1500 | ₹ 556.25 | ₹ 8,34,375.00 |
| 100 | ₹ 680.85 | ₹ 68,085.00 |
| 10 | ₹ 784.45 | ₹ 7,844.50 |
| 1 | ₹ 1,124.96 | ₹ 1,124.96 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | P2 | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | GaNFET (Gallium Nitride) | |
| Drain-Source Breakdown Volts | 650 V | |
| Continuous Drain Current at 25C | 27A | |
| Gate Drive Voltage Range | - | |
| Max On-State Resistance | 77mOhm @ 10A, 15V | |
| Max Threshold Gate Voltage | 4.2V @ 10mA | |
| Max Gate Charge at Vgs | - | |
| Maximum Gate Voltage | - | |
| Max Input Cap at Vds | - | |
| Transistor Special Function | - | |
| Max Heat Dissipation | - | |
| Ambient Temp Range | - | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount, Wettable Flank | |
| Vendor Package Type | BHDFN-9-1 | |
| Component Housing Style | - |
Description
Supports a continuous drain current (Id) of 27A at 25°C. Supports Vdss drain-to-source voltage rated at 650 V. Accommodates FET classification identified as N-Channel. Mounting style Surface Mount, Wettable Flank for structural integrity. Enclosure type BHDFN-9-1 ensuring device integrity. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 77mOhm @ 10A, 15V for MOSFET criteria. Product or component classification series P2. Manufacturer package type BHDFN-9-1 for component choice. Platform technology GaNFET (Gallium Nitride) for the type of product. Peak Vgs(th) at Id 4.2V @ 10mA for MOSFET threshold level.
