Stock: 4640
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5000 | ₹ 180.22 | ₹ 9,01,100.00 |
| 500 | ₹ 220.60 | ₹ 1,10,300.00 |
| 100 | ₹ 228.77 | ₹ 22,877.00 |
| 10 | ₹ 319.60 | ₹ 3,196.00 |
| 1 | ₹ 479.71 | ₹ 479.71 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | ICeGaN™ | |
| IC Encapsulation Type | Cut Tape (CT) | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | GaNFET (Gallium Nitride) | |
| Drain-Source Breakdown Volts | 650 V | |
| Continuous Drain Current at 25C | 7A | |
| Gate Drive Voltage Range | 12V | |
| Max On-State Resistance | 336mOhm @ 500mA, 12V | |
| Max Threshold Gate Voltage | 4.2V @ 2.3mA | |
| Max Gate Charge at Vgs | 1.2 nC @ 12 V | |
| Maximum Gate Voltage | +20V, -1V | |
| Max Input Cap at Vds | - | |
| Transistor Special Function | - | |
| Max Heat Dissipation | - | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | 8-DFN (5x6) | |
| Component Housing Style | 8-PowerVDFN |
Description
Supports a continuous drain current (Id) of 7A at 25°C. Supports Vdss drain-to-source voltage rated at 650 V. Accommodates drive voltage specified at 12V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 1.2 nC @ 12 V gate charge at Vgs for enhanced switching efficiency. Upholds 1.2 nC @ 12 V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Cut Tape (CT) for component protection or transport. Enclosure/case 8-PowerVDFN providing mechanical and thermal shielding. Enclosure type 8-DFN (5x6) ensuring device integrity. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 1.2 nC @ 12 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 336mOhm @ 500mA, 12V for MOSFET criteria. Product or component classification series ICeGaN™. Manufacturer package type 8-DFN (5x6) for component choice. Platform technology GaNFET (Gallium Nitride) for the type of product. Peak Vgs +20V, -1V for MOSFET parameters. Peak Vgs(th) at Id 4.2V @ 2.3mA for MOSFET threshold level.
