KPDA100P-H8-B

KPDA100P-H8-B
Attribute
Description
Manufacturer Part Number
KPDA100P-H8-B
Description
SENSOR PHOTODIODE 780NM TO206AA
Note : GST will not be applied to orders shipping outside of India

Stock:
23

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
10 ₹ 12,229.95 ₹ 1,22,299.50
1 ₹ 14,141.96 ₹ 14,141.96

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bag
Availability Status Active
Light Wavelength nm 780nm
Vivid Color Option -
Light Spectrum Coverage 400nm ~ 1000nm
Semiconductor Diode Category Avalanche
Sensitivity at Wavelength 0.45 A/W @ 850nm
Activation Speed ms -
Max Reverse DC Voltage 200 V
Typical Dark Current 30pA
Functional Surface Area 1mm Dia
Display View Cone Degrees -
Ambient Temp Range -40°C ~ 85°C
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Component Housing Style TO-206AA, TO-18-3 Metal Can

Description

Boasts an active display region of 1mm Dia for enhanced visibility. Features a typical dark current measured at 30pA. Includes diode type indicated as Avalanche. Mounting style Through Hole for structural integrity. Operating temperature -40°C ~ 85°C for thermal stability. Enclosure Bag for component protection or transport. Enclosure/case TO-206AA, TO-18-3 Metal Can providing mechanical and thermal shielding. Product condition Active for availability and lifecycle. Sensitivity at wavelength 0.45 A/W @ 850nm for optical sensing. Spectral range 400nm ~ 1000nm for lighting or sensor use. Highest DC reverse voltage 200 V for diodes. Light wavelength 780nm for RF or optical instruments.

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