SP-1511S-1

SP-1511S-1
Attribute
Description
Manufacturer Part Number
SP-1511S-1
Manufacturer
Description
SPEAKER 8OHM 700MW TOP PORT 83DB
Note : GST will not be applied to orders shipping outside of India

Stock:
200

Distributor: 110

Lead Time: Not specified

Quantity Unit Price Ext. Price
10000 ₹ 100.57 ₹ 10,05,700.00
7500 ₹ 102.35 ₹ 7,67,625.00
5000 ₹ 105.02 ₹ 5,25,100.00
2500 ₹ 110.36 ₹ 2,75,900.00
1000 ₹ 116.59 ₹ 1,16,590.00
500 ₹ 121.93 ₹ 60,965.00
300 ₹ 125.49 ₹ 37,647.00
100 ₹ 132.61 ₹ 13,261.00

Stock:
200

Distributor: 115

Lead Time: Not specified


Quantity Unit Price Ext. Price
10000 ₹ 100.57 ₹ 10,05,700.00
7500 ₹ 102.35 ₹ 7,67,625.00
5000 ₹ 105.02 ₹ 5,25,100.00
2500 ₹ 110.36 ₹ 2,75,900.00
1000 ₹ 116.59 ₹ 1,16,590.00
500 ₹ 121.93 ₹ 60,965.00
300 ₹ 125.49 ₹ 37,647.00
100 ₹ 132.61 ₹ 13,261.00

Stock:
13016

Distributor: 117

Lead Time: Not specified


Quantity Unit Price Ext. Price
5000 ₹ 108.13 ₹ 5,40,650.00
1000 ₹ 110.97 ₹ 1,10,970.00
500 ₹ 118.60 ₹ 59,300.00
300 ₹ 124.62 ₹ 37,386.00
100 ₹ 138.86 ₹ 13,886.00
50 ₹ 148.81 ₹ 7,440.50
25 ₹ 159.60 ₹ 3,990.00
10 ₹ 175.33 ₹ 1,753.30
1 ₹ 222.95 ₹ 222.95

Stock:
200

Distributor: 111

Lead Time: Not specified


Quantity Unit Price Ext. Price
100 ₹ 166.39 ₹ 16,639.00

Stock:
200

Distributor: 113

Lead Time: Not specified


Quantity Unit Price Ext. Price
100 ₹ 185.65 ₹ 18,565.00
300 ₹ 175.69 ₹ 52,707.00
500 ₹ 170.70 ₹ 85,350.00
1000 ₹ 163.23 ₹ 1,63,230.00
2500 ₹ 154.50 ₹ 3,86,250.00
5000 ₹ 147.03 ₹ 7,35,150.00
7500 ₹ 143.29 ₹ 10,74,675.00
10000 ₹ 140.80 ₹ 14,08,000.00

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line SP Micro Speaker
IC Encapsulation Type Tray
Availability Status Active
Core Technology Platform Magnetic
Device Type Classification General Purpose
Operational Hz Spectrum 400 Hz ~ 5 kHz
Self-Resonance Frequency 850Hz
AC Resistance Value 8 Ohms
Noise Efficiency in dBA 83.00
Tested Efficiency Metrics 100mW
Efficiency Measurement Method Sound Pressure Level (SPL)
Nominal Power Rating 700 mW
Maximum Power Handling 800 mW
Connection Port Placement Top
Physical Shape Form Rectangular
Speaker Cone Material Polyetheretherketone (PEEK)
Magnetic Element Composition N42
Dust Water Resistance Rating -
Performance Rating Specs -
Circuit End Method Spring Type
Package Size Specs 0.591" L x 0.433" W (15.00mm x 11.00mm)
Maximum Mounted Height 0.124" (3.15mm)

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Features tested efficiency quantified at 100mW. Presents efficiency type categorized as Sound Pressure Level (SPL). Provides efficiency quantified at 83.00 dBA. Includes a 850Hz self-resonant frequency that guarantees optimal component efficiency. Provides a 400 Hz ~ 5 kHz frequency range for wide-spectrum applications. Maximum seated height of 0.124" (3.15mm) for components mounted on the board. Set with 8 Ohms impedance to ensure signal integrity. Material Polyetheretherketone (PEEK) for the acoustic or mechanical functionality of the cone. Material N42 for enhanced magnetic performance. Enclosure Tray for component protection or transport. Location Top of the port for installation guidance. Energy 700 mW for device power needs. Peak power 800 mW for device protection. Specified power 700 mW for compliance with standards. Product condition Active for availability and lifecycle. Product or component classification series SP Micro Speaker. Form Rectangular for device or component. Dimensions 0.591" L x 0.433" W (15.00mm x 11.00mm) for mechanical or electrical components. Dimension measurement 0.591" L x 0.433" W (15.00mm x 11.00mm) for component details. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology Magnetic for the type of product. Termination method Spring Type for electrical or mechanical linkage. Category General Purpose for classification or specification. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters.

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