Description

Supports a continuous drain current (Id) of 360A (Tj) at 25°C. Supports Vdss drain-to-source voltage rated at 100 V. Accommodates drive voltage specified at 6V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 216 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 216 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. Rated as Automotive grade for quality assurance. The highest input capacitance is 16011 pF @ 50 V at Vds for safeguarding the device. The input capacitance is rated at 16011 pF @ 50 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-PowerSFN providing mechanical and thermal shielding. Enclosure type PG-HSOF-8-1 ensuring device integrity. Highest power dissipation 375W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Certification AEC-Q101 for compliance or testing purposes. Peak Rds(on) at Id 216 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.4mOhm @ 100A, 10V for MOSFET criteria. Product or component classification series OptiMOS™. Manufacturer package type PG-HSOF-8-1 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 3.8V @ 275µA for MOSFET threshold level.