Home /Products /Discrete Semiconductor Products / Fets Single Arrays And Modules

Stocking Options

Environmental Options

Media

132 Results

Manufacturer1

FET Type0

Drain to Source Voltage (Vdss)0

Current - Continuous Drain (Id) @ 25°C0

Rds On (Max) @ Id, Vgs0

Vgs(th) (Max) @ Id0

Gate Charge (Qg) @ Vgs0

Input Capacitance (Ciss) @ Vds0

Power - Max0

Mounting Type0

Package / Case0

Manufacturer

MICROSEMI CORP

Part Number
Manufacturer
Price
FET Type
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) @ Vgs
Input Capacitance (Ciss) @ Vds
Power - Max
Mounting Type
Package / Case
MICROSEMI CORP
-
MOSFET P-Channel, Metal Oxide
100V
6.5A (Tc)
320 mOhm @ 6.5A, 10V
4V @ 250µA
34.8nC @ 10V
-
800mW
Surface Mount
18-BQFN Exposed Pad
MICROSEMI CORP
-
MOSFET P-Channel, Metal Oxide
100V
6.5A (Tc)
320 mOhm @ 6.5A, 10V
4V @ 250µA
34.8nC @ 10V
-
800mW
Through Hole
TO-205AF
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
100V
3.5A (Tc)
610 mOhm @ 3.5A, 10V
4V @ 250µA
8.1nC @ 10V
-
15W
Through Hole
TO-205AF
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
100V
3.5A (Tc)
610 mOhm @ 3.5A, 10V
4V @ 250µA
8.1nC @ 10V
-
800mW
Surface Mount
18-BQFN Exposed Pad
MICROSEMI CORP
-
MOSFET P-Channel, Metal Oxide
100V
11A (Tc)
360 mOhm @ 11A, 10V
4V @ 250µA
29nC @ 10V
-
75W
Through Hole
TO-204AA, TO-3
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
500V
2.5A (Tc)
1.6 Ohm @ 2.5A, 10V
4V @ 250µA
33nC @ 10V
-
800mW
-
-
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
200V
5.5A (Tc)
420 mOhm @ 5.5A, 10V
4V @ 250µA
42.07nC @ 10V
-
800mW
Through Hole
TO-205AF
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
100V
6A (Tc)
350 mOhm @ 6A, 10V
4V @ 250µA
18nC @ 10V
-
800mW
-
-
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
200V
2.25A (Tc)
1.6 Ohm @ 2.25A, 10V
4V @ 250µA
8.6nC @ 10V
-
15W
-
-
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
100V
8A (Tc)
195 mOhm @ 8A, 10V
4V @ 250µA
28.51nC @ 10V
-
800mW
-
-
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
200V
3.5A (Tc)
850 mOhm @ 3.5A, 10V
4V @ 250µA
14.3nC @ 10V
-
800mW
Through Hole
TO-205AF
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
200V
5.5A (Tc)
420 mOhm @ 5.5A, 10V
4V @ 250µA
42.07nC @ 10V
-
800mW
-
-
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
100V
3.5A (Tc)
610 mOhm @ 3.5A, 10V
4V @ 250µA
8.1nC @ 10V
-
15W
Through Hole
TO-205AF
MICROSEMI CORP
-
MOSFET P-Channel, Metal Oxide
100V
6.5A (Tc)
320 mOhm @ 6.5A, 10V
4V @ 250µA
34.8nC @ 10V
-
800mW
Through Hole
TO-205AF
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
100V
8A (Tc)
195 mOhm @ 8A, 10V
4V @ 250µA
28.51nC @ 10V
-
800mW
Through Hole
TO-205AF
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
500V
2.5A (Tc)
1.6 Ohm @ 2.5A, 10V
4V @ 250µA
33nC @ 10V
-
800mW
Through Hole
TO-205AF
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
100V
6A (Tc)
350 mOhm @ 6A, 10V
4V @ 250µA
18nC @ 10V
-
800mW
Through Hole
TO-205AF
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
200V
3.5A (Tc)
850 mOhm @ 3.5A, 10V
4V @ 250µA
14.3nC @ 10V
-
800mW
-
-
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
200V
2.25A (Tc)
1.6 Ohm @ 2.25A, 10V
4V @ 250µA
8.6nC @ 10V
-
15W
Through Hole
TO-205AF
MICROSEMI CORP
-
MOSFET N-Channel, Metal Oxide
400V
3A (Tc)
1.1 Ohm @ 3A, 10V
4V @ 250µA
34.75nC @ 10V
-
800mW
Through Hole
TO-205AF

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.