SIR422DP-T1-GE3

SIR422DP-T1-GE3
Attribute
Description
Manufacturer Part Number
SIR422DP-T1-GE3
Manufacturer
Description
MOSFET N-CH 40V 40A PPAK SO-8
Note : GST will not be applied to orders shipping outside of India

Stock:
24000

Distributor: 157

Lead Time: Not specified

Quantity Unit Price Ext. Price
24000 ₹ 60.24 ₹ 14,45,760.00
3000 ₹ 65.26 ₹ 1,95,780.00

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 40 V
Continuous Drain Current at 25C 40A (Tc)
Gate Drive Voltage Range 4.5V, 10V
Max On-State Resistance 6.6mOhm @ 20A, 10V
Max Threshold Gate Voltage 2.5V @ 250µA
Max Gate Charge at Vgs 48 nC @ 10 V
Maximum Gate Voltage ±20V
Max Input Cap at Vds 1785 pF @ 20 V
Transistor Special Function -
Max Heat Dissipation 5W (Ta), 34.7W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type PowerPAK® SO-8
Component Housing Style PowerPAK® SO-8

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 40A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 40 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 48 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 48 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1785 pF @ 20 V at Vds for safeguarding the device. The input capacitance is rated at 1785 pF @ 20 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case PowerPAK® SO-8 providing mechanical and thermal shielding. Enclosure type PowerPAK® SO-8 ensuring device integrity. Highest power dissipation 5W (Ta), 34.7W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 48 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 6.6mOhm @ 20A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type PowerPAK® SO-8 for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.

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