SIB457EDK-T1-GE3

SIB457EDK-T1-GE3
Attribute
Description
Manufacturer Part Number
SIB457EDK-T1-GE3
Manufacturer
Description
MOSFET P-CH 20V 9A PPAK SC75-6
Note : GST will not be applied to orders shipping outside of India

Stock:
6000

Distributor: 157

Lead Time: Not specified

Quantity Unit Price Ext. Price
6000 ₹ 34.91 ₹ 2,09,460.00
3000 ₹ 37.82 ₹ 1,13,460.00

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Field Effect Transistor Type P-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 20 V
Continuous Drain Current at 25C 9A (Tc)
Gate Drive Voltage Range 4.5V
Max On-State Resistance 35mOhm @ 4.8A, 4.5V
Max Threshold Gate Voltage 1V @ 250µA
Max Gate Charge at Vgs 44 nC @ 8 V
Maximum Gate Voltage ±8V
Max Input Cap at Vds -
Transistor Special Function -
Max Heat Dissipation 2.4W (Ta), 13W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type PowerPAK® SC-75-6
Component Housing Style PowerPAK® SC-75-6

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 9A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 4.5V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 44 nC @ 8 V gate charge at Vgs for enhanced switching efficiency. Upholds 44 nC @ 8 V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case PowerPAK® SC-75-6 providing mechanical and thermal shielding. Enclosure type PowerPAK® SC-75-6 ensuring device integrity. Highest power dissipation 2.4W (Ta), 13W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 44 nC @ 8 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 35mOhm @ 4.8A, 4.5V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type PowerPAK® SC-75-6 for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±8V for MOSFET parameters. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.

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