SI8472DB-T2-E1

SI8472DB-T2-E1
Attribute
Description
Manufacturer Part Number
SI8472DB-T2-E1
Manufacturer
Description
MOSFET N-CH 20V 4MICRO FOOT
Note : GST will not be applied to orders shipping outside of India

Stock:
15000

Distributor: 157

Lead Time: Not specified

Quantity Unit Price Ext. Price
15000 ₹ 20.40 ₹ 3,06,000.00
3000 ₹ 22.10 ₹ 66,300.00

Stock:
888

Distributor: 118

Lead Time: Not specified


Quantity Unit Price Ext. Price
636 ₹ 22.43 ₹ 14,265.48
160 ₹ 28.04 ₹ 4,486.40
1 ₹ 56.07 ₹ 56.07

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 20 V
Continuous Drain Current at 25C 3.3A (Ta)
Gate Drive Voltage Range 1.5V, 4.5V
Max On-State Resistance 44mOhm @ 1.5A, 4.5V
Max Threshold Gate Voltage 900mV @ 250µA
Max Gate Charge at Vgs 18 nC @ 8 V
Maximum Gate Voltage ±8V
Max Input Cap at Vds 630 pF @ 10 V
Transistor Special Function -
Max Heat Dissipation 780mW (Ta)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type 4-MICRO FOOT® (1x1)
Component Housing Style 4-UFBGA

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 3.3A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 1.5V, 4.5V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 18 nC @ 8 V gate charge at Vgs for enhanced switching efficiency. Upholds 18 nC @ 8 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 630 pF @ 10 V at Vds for safeguarding the device. The input capacitance is rated at 630 pF @ 10 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 4-UFBGA providing mechanical and thermal shielding. Enclosure type 4-MICRO FOOT® (1x1) ensuring device integrity. Highest power dissipation 780mW (Ta) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 18 nC @ 8 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 44mOhm @ 1.5A, 4.5V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 4-MICRO FOOT® (1x1) for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±8V for MOSFET parameters. Peak Vgs(th) at Id 900mV @ 250µA for MOSFET threshold level.

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