SI8424DB-T1-E1
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 8 V | |
| Continuous Drain Current at 25C | 12.2A (Tc) | |
| Gate Drive Voltage Range | 1.2V, 4.5V | |
| Max On-State Resistance | 31mOhm @ 1A, 4.5V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Max Gate Charge at Vgs | 33 nC @ 5 V | |
| Maximum Gate Voltage | ±5V | |
| Max Input Cap at Vds | 1950 pF @ 4 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 2.78W (Ta), 6.25W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | 4-Microfoot | |
| Component Housing Style | 4-XFBGA, CSPBGA |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 12.2A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 8 V. Accommodates drive voltage specified at 1.2V, 4.5V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 33 nC @ 5 V gate charge at Vgs for enhanced switching efficiency. Upholds 33 nC @ 5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1950 pF @ 4 V at Vds for safeguarding the device. The input capacitance is rated at 1950 pF @ 4 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 4-XFBGA, CSPBGA providing mechanical and thermal shielding. Enclosure type 4-Microfoot ensuring device integrity. Highest power dissipation 2.78W (Ta), 6.25W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 33 nC @ 5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 31mOhm @ 1A, 4.5V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 4-Microfoot for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±5V for MOSFET parameters. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
