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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | LITTLE FOOT® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | P-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 20 V | |
| Continuous Drain Current at 25C | 4.1A (Tc) | |
| Gate Drive Voltage Range | 2.5V, 4.5V | |
| Max On-State Resistance | 108mOhm @ 3.3A, 4.5V | |
| Max Threshold Gate Voltage | 1.5V @ 250µA | |
| Max Gate Charge at Vgs | 12 nC @ 10 V | |
| Maximum Gate Voltage | ±12V | |
| Max Input Cap at Vds | 660 pF @ 10 V | |
| Transistor Special Function | Schottky Diode (Isolated) | |
| Max Heat Dissipation | 1.7W (Ta), 2.8W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | 8-SOIC | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Supports a continuous drain current (Id) of 4.1A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 2.5V, 4.5V for RdsOn regulation. Provides FET characteristics categorized as Schottky Diode (Isolated). Accommodates FET classification identified as P-Channel. Guarantees maximum 12 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 12 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 660 pF @ 10 V at Vds for safeguarding the device. The input capacitance is rated at 660 pF @ 10 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOIC ensuring device integrity. Highest power dissipation 1.7W (Ta), 2.8W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 12 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 108mOhm @ 3.3A, 4.5V for MOSFET criteria. Product or component classification series LITTLE FOOT®. Manufacturer package type 8-SOIC for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±12V for MOSFET parameters. Peak Vgs(th) at Id 1.5V @ 250µA for MOSFET threshold level.
