Home /Products /Discrete Semiconductor Products /Fets Single Arrays And Modules /Vishay Siliconix / SI3460DVT1E3
Attribute
Description
Manufacturer Part Number
SI3460DV-T1-E3
Manufacturer
Description
MOSFET N-CH 20V 5.1A 6TSOP
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) | |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 5.1A, 4.5V | |
| Vgs(th) (Max) @ Id | 450mV @ 1mA (Min) | |
| Gate Charge (Qg) @ Vgs | 20nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 1.1W | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSOP (0.065", 1.65mm Width) |
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