Stock: 21000
Distributor: 157
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 21000 | ₹ 30.13 | ₹ 6,32,730.00 |
| 3000 | ₹ 32.64 | ₹ 97,920.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Field Effect Transistor Type | P-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 8 V | |
| Continuous Drain Current at 25C | 6A (Tc) | |
| Gate Drive Voltage Range | 1.2V, 4.5V | |
| Max On-State Resistance | 30mOhm @ 5.3A, 4.5V | |
| Max Threshold Gate Voltage | 800mV @ 250µA | |
| Max Gate Charge at Vgs | 29 nC @ 4.5 V | |
| Maximum Gate Voltage | ±5V | |
| Max Input Cap at Vds | 1485 pF @ 4 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 2.5W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | SOT-23-3 (TO-236) | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Supports a continuous drain current (Id) of 6A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 8 V. Accommodates drive voltage specified at 1.2V, 4.5V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 29 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 29 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1485 pF @ 4 V at Vds for safeguarding the device. The input capacitance is rated at 1485 pF @ 4 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Enclosure type SOT-23-3 (TO-236) ensuring device integrity. Highest power dissipation 2.5W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 29 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 30mOhm @ 5.3A, 4.5V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type SOT-23-3 (TO-236) for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±5V for MOSFET parameters. Peak Vgs(th) at Id 800mV @ 250µA for MOSFET threshold level.
