SI2324DS-T1-GE3

SI2324DS-T1-GE3
Attribute
Description
Manufacturer Part Number
SI2324DS-T1-GE3
Manufacturer
Description
MOSFET N-CH 100V 2.3A SOT23-3
Note : GST will not be applied to orders shipping outside of India

Stock:
6000

Distributor: 157

Lead Time: Not specified

Quantity Unit Price Ext. Price
6000 ₹ 36.29 ₹ 2,17,740.00
3000 ₹ 39.31 ₹ 1,17,930.00

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 100 V
Continuous Drain Current at 25C 2.3A (Tc)
Gate Drive Voltage Range 10V
Max On-State Resistance 234mOhm @ 1.5A, 10V
Max Threshold Gate Voltage 2.9V @ 250µA
Max Gate Charge at Vgs 10.4 nC @ 10 V
Maximum Gate Voltage ±20V
Max Input Cap at Vds 190 pF @ 50 V
Transistor Special Function -
Max Heat Dissipation 1.25W (Ta), 2.5W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type SOT-23-3 (TO-236)
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 2.3A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 100 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 10.4 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 10.4 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 190 pF @ 50 V at Vds for safeguarding the device. The input capacitance is rated at 190 pF @ 50 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Enclosure type SOT-23-3 (TO-236) ensuring device integrity. Highest power dissipation 1.25W (Ta), 2.5W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 10.4 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 234mOhm @ 1.5A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type SOT-23-3 (TO-236) for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 2.9V @ 250µA for MOSFET threshold level.

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