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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | P-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 8 V | |
| Continuous Drain Current at 25C | 5.4A (Tc) | |
| Gate Drive Voltage Range | 1.8V, 4.5V | |
| Max On-State Resistance | 40mOhm @ 4.1A, 4.5V | |
| Max Threshold Gate Voltage | 800mV @ 250µA | |
| Max Gate Charge at Vgs | 15 nC @ 4.5 V | |
| Maximum Gate Voltage | ±8V | |
| Max Input Cap at Vds | 740 pF @ 4 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 960mW (Ta), 1.7W (Tc) | |
| Ambient Temp Range | -50°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | SOT-23-3 (TO-236) | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 5.4A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 8 V. Accommodates drive voltage specified at 1.8V, 4.5V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 15 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 15 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 740 pF @ 4 V at Vds for safeguarding the device. The input capacitance is rated at 740 pF @ 4 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -50°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Enclosure type SOT-23-3 (TO-236) ensuring device integrity. Highest power dissipation 960mW (Ta), 1.7W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 15 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 40mOhm @ 4.1A, 4.5V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type SOT-23-3 (TO-236) for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±8V for MOSFET parameters. Peak Vgs(th) at Id 800mV @ 250µA for MOSFET threshold level.
