Stock: 457
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 142 | ₹ 56.87 | ₹ 8,075.54 |
| 41 | ₹ 94.78 | ₹ 3,885.98 |
| 13 | ₹ 113.74 | ₹ 1,478.62 |
| 3 | ₹ 151.66 | ₹ 454.98 |
Stock: 1000
Distributor: 113
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 62.30 | ₹ 62,300.00 |
| 200 | ₹ 60.43 | ₹ 12,086.00 |
| 1000 | ₹ 58.56 | ₹ 58,560.00 |
| 2000 | ₹ 57.94 | ₹ 1,15,880.00 |
| 6250 | ₹ 56.07 | ₹ 3,50,437.50 |
Stock: 360
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 177 | ₹ 70.77 | ₹ 12,526.29 |
| 54 | ₹ 75.83 | ₹ 4,094.82 |
| 1 | ₹ 202.21 | ₹ 202.21 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Field Effect Transistor Type | P-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 60 V | |
| Continuous Drain Current at 25C | 18A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 140mOhm @ 11A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Max Gate Charge at Vgs | 34 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 1100 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 88W (Tc) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220AB | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 18A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 34 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 34 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1100 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 1100 pF @ 25 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Enclosure type TO-220AB ensuring device integrity. Highest power dissipation 88W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 34 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 140mOhm @ 11A, 10V for MOSFET criteria. Manufacturer package type TO-220AB for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.
