XP152A12C0MR

XP152A12C0MR
Attribute
Description
Manufacturer Part Number
XP152A12C0MR
Description
MOSFET P-CH 20V 700MA SOT23
Note : GST will not be applied to orders shipping outside of India

Stock:
10363

Distributor: 118

Lead Time: Not specified

Quantity Unit Price Ext. Price
8659 ₹ 14.72 ₹ 1,27,460.48
4064 ₹ 15.42 ₹ 62,666.88
1 ₹ 42.05 ₹ 42.05

Stock:
24000

Distributor: 116

Lead Time: Not specified


Quantity Unit Price Ext. Price
24000 ₹ 18.89 ₹ 4,53,360.00
18000 ₹ 18.98 ₹ 3,41,640.00
12000 ₹ 19.08 ₹ 2,28,960.00
6000 ₹ 19.18 ₹ 1,15,080.00
3000 ₹ 19.28 ₹ 57,840.00

Stock:
9000

Distributor: 117

Lead Time: Not specified


Quantity Unit Price Ext. Price
9000 ₹ 19.47 ₹ 1,75,230.00
6000 ₹ 20.06 ₹ 1,20,360.00
3000 ₹ 21.57 ₹ 64,710.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Not For New Designs
Field Effect Transistor Type P-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 20 V
Continuous Drain Current at 25C 700mA (Ta)
Gate Drive Voltage Range 2.5V, 4.5V
Max On-State Resistance 300mOhm @ 400mA, 4.5V
Max Threshold Gate Voltage -
Max Gate Charge at Vgs -
Maximum Gate Voltage ±12V
Max Input Cap at Vds 180 pF @ 10 V
Transistor Special Function -
Max Heat Dissipation 500mW (Ta)
Ambient Temp Range 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type SOT-23
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Supports a continuous drain current (Id) of 700mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 2.5V, 4.5V for RdsOn regulation. Accommodates FET classification identified as P-Channel. The highest input capacitance is 180 pF @ 10 V at Vds for safeguarding the device. The input capacitance is rated at 180 pF @ 10 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Enclosure type SOT-23 ensuring device integrity. Highest power dissipation 500mW (Ta) for effective thermal control. Product condition Not For New Designs for availability and lifecycle. Peak Rds(on) at Id and Vgs 300mOhm @ 400mA, 4.5V for MOSFET criteria. Manufacturer package type SOT-23 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±12V for MOSFET parameters.

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