XP151A13A0MR

XP151A13A0MR
Attribute
Description
Manufacturer Part Number
XP151A13A0MR
Description
MOSFET N-CH 20V 1A SOT23
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Stock:
15000

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
15000 ₹ 16.69 ₹ 2,50,350.00
9000 ₹ 16.87 ₹ 1,51,830.00
6000 ₹ 17.56 ₹ 1,05,360.00
3000 ₹ 18.91 ₹ 56,730.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Not For New Designs
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 20 V
Continuous Drain Current at 25C 1A (Ta)
Gate Drive Voltage Range 1.5V, 4.5V
Max On-State Resistance 100mOhm @ 500mA, 4.5V
Max Threshold Gate Voltage -
Max Gate Charge at Vgs -
Maximum Gate Voltage ±8V
Max Input Cap at Vds 220 pF @ 10 V
Transistor Special Function -
Max Heat Dissipation 500mW (Ta)
Ambient Temp Range 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type SOT-23
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Supports a continuous drain current (Id) of 1A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 1.5V, 4.5V for RdsOn regulation. Accommodates FET classification identified as N-Channel. The highest input capacitance is 220 pF @ 10 V at Vds for safeguarding the device. The input capacitance is rated at 220 pF @ 10 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Enclosure type SOT-23 ensuring device integrity. Highest power dissipation 500mW (Ta) for effective thermal control. Product condition Not For New Designs for availability and lifecycle. Peak Rds(on) at Id and Vgs 100mOhm @ 500mA, 4.5V for MOSFET criteria. Manufacturer package type SOT-23 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±8V for MOSFET parameters.

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