Stock: 30
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 27 | ₹ 535.67 | ₹ 14,463.09 |
| 15 | ₹ 578.53 | ₹ 8,677.95 |
| 6 | ₹ 642.80 | ₹ 3,856.80 |
| 1 | ₹ 857.07 | ₹ 857.07 |
Stock: 575
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 30 | ₹ 714.23 | ₹ 21,426.90 |
| 1 | ₹ 906.02 | ₹ 906.02 |
Stock: 24
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5 | ₹ 857.07 | ₹ 4,285.35 |
| 1 | ₹ 1,142.76 | ₹ 1,142.76 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | MDmesh™ V | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 650 V | |
| Continuous Drain Current at 25C | 46A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 59mOhm @ 23A, 10V | |
| Max Threshold Gate Voltage | 5V @ 250µA | |
| Max Gate Charge at Vgs | 139 nC @ 10 V | |
| Maximum Gate Voltage | ±25V | |
| Max Input Cap at Vds | 6810 pF @ 100 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 255W (Tc) | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-247-3 | |
| Component Housing Style | TO-247-3 |
Description
Supports a continuous drain current (Id) of 46A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 139 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 139 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 6810 pF @ 100 V at Vds for safeguarding the device. The input capacitance is rated at 6810 pF @ 100 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Enclosure type TO-247-3 ensuring device integrity. Highest power dissipation 255W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 139 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 59mOhm @ 23A, 10V for MOSFET criteria. Product or component classification series MDmesh™ V. Manufacturer package type TO-247-3 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±25V for MOSFET parameters. Peak Vgs(th) at Id 5V @ 250µA for MOSFET threshold level.
