STT5N2VH5

STT5N2VH5
Attribute
Description
Manufacturer Part Number
STT5N2VH5
Manufacturer
Description
MOSFET N-CH 20V SOT23-6
Note : GST will not be applied to orders shipping outside of India

Stock:
10626

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
6000 ₹ 15.82 ₹ 94,920.00
3000 ₹ 17.24 ₹ 51,720.00
1000 ₹ 20.05 ₹ 20,050.00
500 ₹ 22.27 ₹ 11,135.00
100 ₹ 29.14 ₹ 2,914.00
10 ₹ 45.03 ₹ 450.30
1 ₹ 72.98 ₹ 72.98

Stock:
3205

Distributor: 130

Lead Time: Not specified


Quantity Unit Price Ext. Price
5 ₹ 67.07 ₹ 335.35
10 ₹ 41.39 ₹ 413.90
100 ₹ 26.78 ₹ 2,678.00
500 ₹ 20.47 ₹ 10,235.00
1000 ₹ 18.44 ₹ 18,440.00
5000 ₹ 18.07 ₹ 90,350.00

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line STripFET™ V
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)
Availability Status Obsolete
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 20 V
Continuous Drain Current at 25C 5A (Tj)
Gate Drive Voltage Range 2.5V, 4.5V
Max On-State Resistance 30mOhm @ 2A, 4.5V
Max Threshold Gate Voltage 700mV @ 250µA (Min)
Max Gate Charge at Vgs 4.6 nC @ 4.5 V
Maximum Gate Voltage ±8V
Max Input Cap at Vds 367 pF @ 16 V
Transistor Special Function -
Max Heat Dissipation 1.6W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type SOT-23-6
Component Housing Style SOT-23-6

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 5A (Tj) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 2.5V, 4.5V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 4.6 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 4.6 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 367 pF @ 16 V at Vds for safeguarding the device. The input capacitance is rated at 367 pF @ 16 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT) for component protection or transport. Enclosure/case SOT-23-6 providing mechanical and thermal shielding. Enclosure type SOT-23-6 ensuring device integrity. Highest power dissipation 1.6W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 4.6 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 30mOhm @ 2A, 4.5V for MOSFET criteria. Product or component classification series STripFET™ V. Manufacturer package type SOT-23-6 for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±8V for MOSFET parameters. Peak Vgs(th) at Id 700mV @ 250µA (Min) for MOSFET threshold level.

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