Stock: 20
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100 | ₹ 2,966.66 | ₹ 2,96,666.00 |
| 10 | ₹ 3,544.12 | ₹ 35,441.20 |
| 1 | ₹ 4,053.51 | ₹ 4,053.51 |
Stock: 1600
Distributor: 116
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1600 | ₹ 3,231.98 | ₹ 51,71,168.00 |
| 800 | ₹ 3,290.75 | ₹ 26,32,600.00 |
| 400 | ₹ 3,351.69 | ₹ 13,40,676.00 |
| 200 | ₹ 3,414.92 | ₹ 6,82,984.00 |
| 100 | ₹ 3,436.54 | ₹ 3,43,654.00 |
Stock: 100
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100 | ₹ 3,393.58 | ₹ 3,39,358.00 |
Stock: 100
Distributor: 113
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100 | ₹ 3,547.36 | ₹ 3,54,736.00 |
| 20 | ₹ 3,524.93 | ₹ 70,498.60 |
| 40 | ₹ 3,502.51 | ₹ 1,40,100.40 |
| 50 | ₹ 3,496.28 | ₹ 1,74,814.00 |
| 150 | ₹ 3,451.42 | ₹ 5,17,713.00 |
Stock: 30
Distributor: 11
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 30 | ₹ 3,717.53 | ₹ 1,11,525.90 |
| 10 | ₹ 4,140.28 | ₹ 41,402.80 |
| 3 | ₹ 4,687.63 | ₹ 14,062.89 |
| 1 | ₹ 5,203.83 | ₹ 5,203.83 |
Stock: 42
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 5,107.71 | ₹ 5,107.71 |
| 10 | ₹ 4,219.49 | ₹ 42,194.90 |
| 100 | ₹ 3,325.93 | ₹ 3,32,593.00 |
| 500 | ₹ 3,301.01 | ₹ 16,50,505.00 |
Stock: 42
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 5,211.84 | ₹ 5,211.84 |
| 10 | ₹ 4,305.82 | ₹ 43,058.20 |
| 100 | ₹ 3,393.57 | ₹ 3,39,357.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | MDmesh™ | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 600 V | |
| Continuous Drain Current at 25C | 70A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 55mOhm @ 30A, 10V | |
| Max Threshold Gate Voltage | 5V @ 250µA | |
| Max Gate Charge at Vgs | 266 nC @ 10 V | |
| Maximum Gate Voltage | ±30V | |
| Max Input Cap at Vds | 7300 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 600W (Tc) | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Chassis Mount | |
| Vendor Package Type | ISOTOP® | |
| Component Housing Style | ISOTOP |
Description
Supports a continuous drain current (Id) of 70A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 600 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 266 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 266 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 7300 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 7300 pF @ 25 V at Vds for optimal performance. Mounting style Chassis Mount for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case ISOTOP providing mechanical and thermal shielding. Enclosure type ISOTOP® ensuring device integrity. Highest power dissipation 600W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 266 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 55mOhm @ 30A, 10V for MOSFET criteria. Product or component classification series MDmesh™. Manufacturer package type ISOTOP® for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±30V for MOSFET parameters. Peak Vgs(th) at Id 5V @ 250µA for MOSFET threshold level.
