STE40NC60

Description

Supports a continuous drain current (Id) of 40A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 600 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 430 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 430 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 11100 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 11100 pF @ 25 V at Vds for optimal performance. Mounting style Chassis Mount for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case SOT-227-4, miniBLOC providing mechanical and thermal shielding. Enclosure type ISOTOP ensuring device integrity. Highest power dissipation 460W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 430 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 130mOhm @ 20A, 10V for MOSFET criteria. Product or component classification series PowerMESH™ II. Manufacturer package type ISOTOP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±30V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.