Stock: 1500
Distributor: 128
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 12800 | ₹ 40.67 | ₹ 5,20,576.00 |
| 6400 | ₹ 42.36 | ₹ 2,71,104.00 |
| 3200 | ₹ 43.43 | ₹ 1,38,976.00 |
| 1600 | ₹ 45.30 | ₹ 72,480.00 |
| 1000 | ₹ 46.55 | ₹ 46,550.00 |
| 200 | ₹ 52.60 | ₹ 10,520.00 |
| 100 | ₹ 56.25 | ₹ 5,625.00 |
| 50 | ₹ 69.06 | ₹ 3,453.00 |
| 10 | ₹ 75.83 | ₹ 758.30 |
| 1 | ₹ 154.86 | ₹ 154.86 |
Stock: 1500
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 55.09 | ₹ 55,090.00 |
| 200 | ₹ 67.73 | ₹ 13,546.00 |
| 100 | ₹ 74.31 | ₹ 7,431.00 |
| 66 | ₹ 152.19 | ₹ 10,044.54 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 40 V | |
| Continuous Drain Current at 25C | 85A (Tc) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 3mOhm @ 82.5A, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 1.5mA | |
| Max Gate Charge at Vgs | 97.6 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 6200 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 135W (Tc) | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | TO-263 | |
| Component Housing Style | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Description
Supports a continuous drain current (Id) of 85A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 40 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 97.6 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 97.6 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 6200 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 6200 pF @ 25 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Enclosure type TO-263 ensuring device integrity. Highest power dissipation 135W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 97.6 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3mOhm @ 82.5A, 10V for MOSFET criteria. Manufacturer package type TO-263 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 2.5V @ 1.5mA for MOSFET threshold level.
