Stock: 3750
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3750 | ₹ 171.33 | ₹ 6,42,487.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 450 V | |
| Continuous Drain Current at 25C | 7A (Ta) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 1.1Ohm @ 3.5A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1µA | |
| Max Gate Charge at Vgs | - | |
| Maximum Gate Voltage | ±30V | |
| Max Input Cap at Vds | 720 pF @ 10 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 35W (Tc) | |
| Ambient Temp Range | - | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220F | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Supports a continuous drain current (Id) of 7A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 450 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. The highest input capacitance is 720 pF @ 10 V at Vds for safeguarding the device. The input capacitance is rated at 720 pF @ 10 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure Bulk for component protection or transport. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Enclosure type TO-220F ensuring device integrity. Highest power dissipation 35W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 1.1Ohm @ 3.5A, 10V for MOSFET criteria. Manufacturer package type TO-220F for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±30V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 1µA for MOSFET threshold level.
