Stock: 319
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 268.78 | ₹ 26,87,800.00 |
| 1000 | ₹ 285.69 | ₹ 2,85,690.00 |
| 500 | ₹ 302.60 | ₹ 1,51,300.00 |
| 100 | ₹ 319.51 | ₹ 31,951.00 |
| 25 | ₹ 336.42 | ₹ 8,410.50 |
Stock: 319
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 374.91 | ₹ 37,49,100.00 |
| 1000 | ₹ 398.27 | ₹ 3,98,270.00 |
| 500 | ₹ 421.64 | ₹ 2,10,820.00 |
| 100 | ₹ 445.00 | ₹ 44,500.00 |
| 72 | ₹ 468.36 | ₹ 33,721.92 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 120 V | |
| Continuous Drain Current at 25C | 70A (Ta) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 6.7mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Max Gate Charge at Vgs | 207.1 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 11384 pF @ 60 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 405W (Ta) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220AB | |
| Component Housing Style | TO-220-3 |
Description
Supports a continuous drain current (Id) of 70A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 120 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 207.1 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 207.1 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 11384 pF @ 60 V at Vds for safeguarding the device. The input capacitance is rated at 11384 pF @ 60 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Enclosure type TO-220AB ensuring device integrity. Highest power dissipation 405W (Ta) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 207.1 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 6.7mOhm @ 25A, 10V for MOSFET criteria. Manufacturer package type TO-220AB for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
