Stock: 135
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 160.20 | ₹ 16,02,000.00 |
| 1000 | ₹ 169.99 | ₹ 1,69,990.00 |
| 500 | ₹ 180.67 | ₹ 90,335.00 |
| 100 | ₹ 190.46 | ₹ 19,046.00 |
| 25 | ₹ 200.25 | ₹ 5,006.25 |
Stock: 135
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 223.61 | ₹ 22,36,100.00 |
| 1000 | ₹ 236.96 | ₹ 2,36,960.00 |
| 500 | ₹ 251.43 | ₹ 1,25,715.00 |
| 127 | ₹ 264.78 | ₹ 33,627.06 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 80V | |
| Continuous Drain Current at 25C | 120A (Tmb) | |
| Max On-State Resistance | 3.5 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 111nC @ 10V | |
| Input Cap at Vds | 8161pF @ 40V | |
| Maximum Power Handling | 306W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 120A (Tmb) at 25°C. Supports Vdss drain-to-source voltage rated at 80V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 111nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 8161pF @ 40V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Peak power 306W for device protection. Peak Rds(on) at Id 111nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3.5 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
