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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 30A (Ta) | |
| Max On-State Resistance | 38 mOhm @ 5A, 5V | |
| Max Threshold Gate Voltage | 2.1V @ 1mA | |
| Gate Charge at Vgs | 21.6nC @ 5V | |
| Input Cap at Vds | 2541pF @ 25V | |
| Maximum Power Handling | 94.9W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-100, SOT-669, 4-LFPAK |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 30A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 21.6nC @ 5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2541pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case SC-100, SOT-669, 4-LFPAK providing mechanical and thermal shielding. Peak power 94.9W for device protection. Peak Rds(on) at Id 21.6nC @ 5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 38 mOhm @ 5A, 5V for MOSFET criteria. Peak Vgs(th) at Id 2.1V @ 1mA for MOSFET threshold level.
