IXTR90P10P
Data Sheet
Attribute
Description
Manufacturer Part Number
IXTR90P10P
Manufacturer
Description
MOSFET P-CH 100V 57A ISOPLUS247
Manufacturer Lead Time
38 weeks
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 57A (Tc) | |
| Max On-State Resistance | 27 mOhm @ 45A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Gate Charge at Vgs | 120nC @ 10V | |
| Input Cap at Vds | 5800pF @ 25V | |
| Maximum Power Handling | 190W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | - |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 57A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 120nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 5800pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Peak power 190W for device protection. Peak Rds(on) at Id 120nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 27 mOhm @ 45A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.
