IXTP1R4N100P
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 1000V (1kV) | |
| Continuous Drain Current at 25C | 1.4A (Tc) | |
| Max On-State Resistance | 11 Ohm @ 500mA, 10V | |
| Max Threshold Gate Voltage | 4.5V @ 50µA | |
| Gate Charge at Vgs | 17.8nC @ 10V | |
| Input Cap at Vds | 450pF @ 25V | |
| Maximum Power Handling | 63W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 1.4A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 1000V (1kV). Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 17.8nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 450pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 63W for device protection. Peak Rds(on) at Id 17.8nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 11 Ohm @ 500mA, 10V for MOSFET criteria. Peak Vgs(th) at Id 4.5V @ 50µA for MOSFET threshold level.
