Stock: 1008
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 801 | ₹ 61.41 | ₹ 49,189.41 |
| 371 | ₹ 66.75 | ₹ 24,764.25 |
| 1 | ₹ 133.50 | ₹ 133.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | OptiMOS™ | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 25 V | |
| Continuous Drain Current at 25C | 50A (Tc) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 5.9mOhm @ 30A, 10V | |
| Max Threshold Gate Voltage | 2V @ 40µA | |
| Max Gate Charge at Vgs | 22 nC @ 5 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 2653 pF @ 15 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 83W (Tc) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | PG-TO263-3-2 | |
| Component Housing Style | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Description
Supports a continuous drain current (Id) of 50A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 25 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 22 nC @ 5 V gate charge at Vgs for enhanced switching efficiency. Upholds 22 nC @ 5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 2653 pF @ 15 V at Vds for safeguarding the device. The input capacitance is rated at 2653 pF @ 15 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Enclosure type PG-TO263-3-2 ensuring device integrity. Highest power dissipation 83W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 22 nC @ 5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 5.9mOhm @ 30A, 10V for MOSFET criteria. Product or component classification series OptiMOS™. Manufacturer package type PG-TO263-3-2 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 2V @ 40µA for MOSFET threshold level.
