FDV301N
Data Sheet
Stock: 75000
Distributor: 13
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 75000 | ₹ 0.93 | ₹ 69,750.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 25V | |
| Continuous Drain Current at 25C | 220mA (Ta) | |
| Max On-State Resistance | 4 Ohm @ 400mA, 4.5V | |
| Max Threshold Gate Voltage | 1.06V @ 250µA | |
| Gate Charge at Vgs | 0.7nC @ 4.5V | |
| Input Cap at Vds | 9.5pF @ 10V | |
| Maximum Power Handling | 350mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 220mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 25V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 0.7nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 9.5pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 350mW for device protection. Peak Rds(on) at Id 0.7nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 4 Ohm @ 400mA, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 1.06V @ 250µA for MOSFET threshold level.
