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Manufacturer1

Diode Type0

Reverse DC Voltage(Vr)0

Current - Average Rectified (Io)0

Forward Voltage (Vf)0

Speed0

Reverse Recovery Time (trr)0

Reverse Leakage Current @ Vr0

Capacitance @ Vr, F0

Thermal Resistance0

Operating Temperature - Junction0

Mounting Type0

Package / Case0

Manufacturer

CREE INC

Part Number
Manufacturer
Price
Diode Type
Reverse DC Voltage(Vr)
Current - Average Rectified (Io)
Forward Voltage (Vf)
Speed
Reverse Recovery Time (trr)
Reverse Leakage Current @ Vr
Capacitance @ Vr, F
Thermal Resistance
Operating Temperature - Junction
Mounting Type
Package / Case
CREE INC
-
Silicon Carbide Schottky
600V
12.5A
1.8V @ 8A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
470pF @ 0V, 1MHz
1.4°C/W Jc
-55°C ~ 175°C
Through Hole
TO-220-2
CREE INC
-
Silicon Carbide Schottky
600V
3.5A
1.8V @ 2A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
120pF @ 0V, 1MHz
4.7°C/W Jc
-55°C ~ 175°C
Through Hole
TO-220-2
CREE INC
-
Silicon Carbide Schottky
650V
8A
1.8V @ 8A
No Recovery Time > 500mA (Io)
0ns
60µA @ 650V
441pF @ 0V, 1MHz
1.5°C/W Jc
-55°C ~ 175°C
Through Hole
TO-220-2
CREE INC
-
Silicon Carbide Schottky
600V
16.5A
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
550pF @ 0V, 1MHz
1.1°C/W Jc
-55°C ~ 175°C
Through Hole
TO-220-2
CREE INC
-
Silicon Carbide Schottky
600V
7A
1.8V @ 4A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
220pF @ 0V, 1MHz
2.4°C/W Jc
-55°C ~ 175°C
Through Hole
TO-220-2
CREE INC
-
Silicon Carbide Schottky
1700V (1.7kV)
25A
2V @ 25A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1700V
2250pF @ 0V, 1MHz
-
-55°C ~ 175°C
Surface Mount
Wafer, Sawn on Foil
CREE INC
-
Silicon Carbide Schottky
600V
2.2A
1.8V @ 1A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
80pF @ 0V, 1MHz
7°C/W Jc
-55°C ~ 175°C
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
CREE INC
-
Silicon Carbide Schottky
300V
10A
1.4V @ 10A
No Recovery Time > 500mA (Io)
0ns
200µA @ 300V
660pF @ 0V, 1MHz
1.9°C/W Jc
-55°C ~ 175°C
Through Hole
TO-220-2
CREE INC
-
Silicon Carbide Schottky
600V
3.5A
1.8V @ 2A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
120pF @ 0V, 1MHz
4.7°C/W Jc
-55°C ~ 175°C
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
CREE INC
-
Silicon Carbide Schottky
1200V (1.2kV)
8.2A
1.8V @ 5A
No Recovery Time > 500mA (Io)
0ns
150µA @ 1200V
390pF @ 0V, 1MHz
1.85°C/W Jc
-55°C ~ 175°C
Through Hole
TO-220-2
CREE INC
-
Silicon Carbide Schottky
600V
10A
1.8V @ 6A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
340pF @ 0V, 1MHz
1.8°C/W Jc
-55°C ~ 175°C
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
CREE INC
-
Silicon Carbide Schottky
600V
7A
1.8V @ 4A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
220pF @ 0V, 1MHz
2.4°C/W Jc
-55°C ~ 175°C
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
CREE INC
-
Silicon Carbide Schottky
1700V (1.7kV)
10A
2V @ 10A
No Recovery Time > 500mA (Io)
0ns
50µA @ 1700V
880pF @ 0V, 1MHz
-
-55°C ~ 175°C
Surface Mount
Wafer, Sawn on Foil
CREE INC
-
Silicon Carbide Schottky
600V
16.5A
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
550pF @ 0V, 1MHz
1.1°C/W Jc
-55°C ~ 175°C
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
CREE INC
-
Silicon Carbide Schottky
600V
3A
1.7V @ 3A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
155pF @ 0V, 1MHz
2.8°C/W Jc
-55°C ~ 175°C
Through Hole
TO-220-2
CREE INC
-
Silicon Carbide Schottky
600V
2A
1.7V @ 2A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
120pF @ 0V, 1MHz
3.8°C/W Jc
-55°C ~ 175°C
Through Hole
TO-220-2
CREE INC
-
Silicon Carbide Schottky
600V
2A
1.7V @ 2A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
120pF @ 0V, 1MHz
13.8°C/W Jc
-55°C ~ 175°C
Through Hole
TO-220-2 Full Pack, Isolated Tab
CREE INC
-
Silicon Carbide Schottky
600V
3A
1.7V @ 3A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
155pF @ 0V, 1MHz
12°C/W Jc
-55°C ~ 175°C
Through Hole
TO-220-2 Full Pack, Isolated Tab
CREE INC
-
Silicon Carbide Schottky
600V
6A
1.8V @ 6A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
294pF @ 0V, 1MHz
8.8°C/W Jc
-55°C ~ 175°C
Through Hole
TO-220-2 Full Pack
CREE INC
-
Silicon Carbide Schottky
600V
10A
1.8V @ 6A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
340pF @ 0V, 1MHz
1.8°C/W Jc
-55°C ~ 175°C
Through Hole
TO-220-2

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