BFU768F,115

BFU768F,115
Attribute
Description
Manufacturer Part Number
BFU768F,115
Manufacturer
Description
No description available
Note : GST will not be applied to orders shipping outside of India

Stock:
2524150

Distributor: 160

Lead Time: Not specified

Quantity Unit Price Ext. Price
100000 ₹ 10.55 ₹ 10,55,000.00
10000 ₹ 12.58 ₹ 1,25,800.00
1000 ₹ 14.12 ₹ 14,120.00
500 ₹ 15.31 ₹ 7,655.00
100 ₹ 17.01 ₹ 1,701.00

Stock:
3000

Distributor: 133

Lead Time: Not specified


Quantity Unit Price Ext. Price
3000 ₹ 15.13 ₹ 45,390.00

Stock:
1610

Distributor: 121

Lead Time: Not specified


Quantity Unit Price Ext. Price
100 ₹ 25.86 ₹ 2,586.00
500 ₹ 22.01 ₹ 11,005.00
1000 ₹ 18.77 ₹ 18,770.00
5000 ₹ 14.66 ₹ 73,300.00

Stock:
1455

Distributor: 130

Lead Time: Not specified


Quantity Unit Price Ext. Price
5 ₹ 56.87 ₹ 284.35
10 ₹ 34.89 ₹ 348.90
100 ₹ 25.04 ₹ 2,504.00
500 ₹ 21.31 ₹ 10,655.00
1000 ₹ 18.17 ₹ 18,170.00
5000 ₹ 14.18 ₹ 70,900.00

Stock:
4554

Distributor: 108

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 64.08 ₹ 64.08
10 ₹ 39.43 ₹ 394.30
100 ₹ 26.88 ₹ 2,688.00
500 ₹ 22.34 ₹ 11,170.00
1000 ₹ 19.05 ₹ 19,050.00
3000 ₹ 14.86 ₹ 44,580.00
9000 ₹ 12.99 ₹ 1,16,910.00
24000 ₹ 12.55 ₹ 3,01,200.00

Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 2.8V
Transition Freq -
Noise Figure @ f 1.1dB @ 2.4GHz
Amplification Factor 13.1dB
Maximum Power Handling 220mW
DC Current Gain (hFE) @ Ic, Vce 155 @ 10mA, 2V
Maximum Collector Amps 70mA
Attachment Mounting Style Surface Mount
Component Housing Style SOT-343F

Description

Provides a maximum collector current (Ic) of 70mA. Features a DC current gain hFE at Ic evaluated at 155 @ 10mA, 2V. Delivers 13.1dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-343F providing mechanical and thermal shielding. Peak power 220mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 13.1dB for transistor parameters. Highest collector-emitter breakdown voltage 2.8V.

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