BFG25AW/X,115

BFG25AW/X,115
Attribute
Description
Manufacturer Part Number
BFG25AW/X,115
Manufacturer
Description
TRANS RF NPN 5GHZ 5V SOT343
Manufacturer Lead Time
52 weeks

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 5V
Transition Freq 5GHz
Noise Figure @ f 1.9dB ~ 2dB @1GHz
Amplification Factor -
Maximum Power Handling 500mW
DC Current Gain (hFE) @ Ic, Vce 50 @ 500µA, 1V
Maximum Collector Amps 6.5mA
Attachment Mounting Style Surface Mount
Component Housing Style SOT-343 Reverse Pinning

Description

Measures resistance at forward current 5GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 6.5mA. Features a DC current gain hFE at Ic evaluated at 50 @ 500µA, 1V. Offers 5GHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-343 Reverse Pinning providing mechanical and thermal shielding. Peak power 500mW for device protection. Type of transistor NPN for circuit architecture. Highest collector-emitter breakdown voltage 5V.

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