MRF517
Data Sheet
Attribute
Description
Manufacturer Part Number
MRF517
Manufacturer
Description
TRANS RF BIPO 2.5W 150MA TO39
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 20V | |
| Transition Freq | 4GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 9dB ~ 10dB | |
| Maximum Power Handling | 2.5W | |
| DC Current Gain (hFE) @ Ic, Vce | - | |
| Maximum Collector Amps | 150mA | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 4GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 150mA. Offers 4GHz transition frequency for seamless signal modulation. Delivers 9dB ~ 10dB gain to improve signal amplification efficiency. Peak power 2.5W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 9dB ~ 10dB for transistor parameters. Highest collector-emitter breakdown voltage 20V.