2N5179
Data Sheet
Attribute
Description
Manufacturer Part Number
2N5179
Manufacturer
Description
TRANS RF NPN 12V 50MA TO72
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 12V | |
| Transition Freq | 200MHz | |
| Noise Figure @ f | 4.5dB @ 200MHz | |
| Amplification Factor | 20dB | |
| Maximum Power Handling | 300mW | |
| DC Current Gain (hFE) @ Ic, Vce | 25 @ 3mA, 1V | |
| Maximum Collector Amps | 50mA | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-206AF, TO-72-4 Metal Can |
Description
Measures resistance at forward current 200MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 50mA. Features a DC current gain hFE at Ic evaluated at 25 @ 3mA, 1V. Offers 200MHz transition frequency for seamless signal modulation. Delivers 20dB gain to improve signal amplification efficiency. Mounting style Through Hole for structural integrity. Enclosure/case TO-206AF, TO-72-4 Metal Can providing mechanical and thermal shielding. Peak power 300mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 20dB for transistor parameters. Highest collector-emitter breakdown voltage 12V.