Attribute
Description
Manufacturer Part Number
BFP 193 E6327
Manufacturer
Description
TRANSISTOR NPN RF 12V SOT-143
Note :
GST will not be applied to orders shipping outside of India
Stock: 2213
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 48.06 | ₹ 48.06 |
| 10 | ₹ 29.46 | ₹ 294.60 |
| 100 | ₹ 19.31 | ₹ 1,931.00 |
| 500 | ₹ 14.15 | ₹ 7,075.00 |
| 1000 | ₹ 12.90 | ₹ 12,900.00 |
| 3000 | ₹ 10.95 | ₹ 32,850.00 |
| 6000 | ₹ 9.88 | ₹ 59,280.00 |
| 9000 | ₹ 9.08 | ₹ 81,720.00 |
| 24000 | ₹ 8.19 | ₹ 1,96,560.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 12V | |
| Transition Freq | 8GHz | |
| Noise Figure @ f | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz | |
| Amplification Factor | 12dB ~ 18dB | |
| Maximum Power Handling | 580mW | |
| DC Current Gain (hFE) @ Ic, Vce | 70 @ 30mA, 8V | |
| Maximum Collector Amps | 80mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-253-4, TO-253AA |
Description
Measures resistance at forward current 8GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 80mA. Features a DC current gain hFE at Ic evaluated at 70 @ 30mA, 8V. Offers 8GHz transition frequency for seamless signal modulation. Delivers 12dB ~ 18dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case TO-253-4, TO-253AA providing mechanical and thermal shielding. Peak power 580mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 12dB ~ 18dB for transistor parameters. Highest collector-emitter breakdown voltage 12V.
