AT-42000-GP4
Data Sheet
Attribute
Description
Manufacturer Part Number
AT-42000-GP4
Manufacturer
Description
TRANSISTOR NPN BIPOLAR CHIP
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 12V | |
| Transition Freq | 9GHz | |
| Noise Figure @ f | 1.9dB ~ 3dB @ 2GHz ~ 4GHz | |
| Amplification Factor | 10.5dB ~ 14dB | |
| Maximum Power Handling | 600mW | |
| DC Current Gain (hFE) @ Ic, Vce | 30 @ 35mA, 8V | |
| Maximum Collector Amps | 80mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 12mm x 12mm x 6mm |
Description
Measures resistance at forward current 9GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 80mA. Features a DC current gain hFE at Ic evaluated at 30 @ 35mA, 8V. Offers 9GHz transition frequency for seamless signal modulation. Delivers 10.5dB ~ 14dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case 12mm x 12mm x 6mm providing mechanical and thermal shielding. Peak power 600mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 10.5dB ~ 14dB for transistor parameters. Highest collector-emitter breakdown voltage 12V.
