ULQ2004A

ULQ2004A
Attribute
Description
Manufacturer Part Number
ULQ2004A
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note : GST will not be applied to orders shipping outside of India

Stock:
1351

Distributor: 142

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 70.31 ₹ 70.31
10 ₹ 45.39 ₹ 453.90
100 ₹ 37.38 ₹ 3,738.00
500 ₹ 35.60 ₹ 17,800.00

Stock:
286

Distributor: 130

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 116.19 ₹ 116.19
10 ₹ 73.48 ₹ 734.80
100 ₹ 48.61 ₹ 4,861.00
500 ₹ 39.99 ₹ 19,995.00
1000 ₹ 31.61 ₹ 31,610.00
2500 ₹ 30.12 ₹ 75,300.00
5000 ₹ 28.62 ₹ 1,43,100.00

Stock:
506

Distributor: 121

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 118.87 ₹ 118.87
10 ₹ 75.17 ₹ 751.70
100 ₹ 49.74 ₹ 4,974.00
500 ₹ 40.91 ₹ 20,455.00
1000 ₹ 32.34 ₹ 32,340.00
2500 ₹ 30.81 ₹ 77,025.00
5000 ₹ 29.28 ₹ 1,46,400.00

Product Attributes

Type Description
Category
Transistor Class 7 NPN Darlington
Maximum Collector Amps 500mA
Max Collector-Emitter Breakdown 50V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 500µA, 350mA
Collector Cutoff Max -
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA, 2V
Maximum Power Handling -
Transition Freq -
Attachment Mounting Style Through Hole
Component Housing Style 16-DIP (0.300", 7.62mm)

Description

Provides a maximum collector current (Ic) of 500mA. Features a DC current gain hFE at Ic evaluated at 1.7V @ 500µA, 350mA. Mounting style Through Hole for structural integrity. Enclosure/case 16-DIP (0.300", 7.62mm) providing mechanical and thermal shielding. Type of transistor 7 NPN Darlington for circuit architecture. Peak Vce(on) at Vge 1.7V @ 500µA, 350mA for transistor parameters. Highest collector-emitter breakdown voltage 50V.

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