Attribute
Description
Manufacturer Part Number
TIP105
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 1
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 115.70 | ₹ 115.70 |
| 10 | ₹ 78.32 | ₹ 783.20 |
| 25 | ₹ 78.32 | ₹ 1,958.00 |
| 100 | ₹ 62.30 | ₹ 6,230.00 |
| 250 | ₹ 61.41 | ₹ 15,352.50 |
| 500 | ₹ 51.62 | ₹ 25,810.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP - Darlington | |
| Maximum Collector Amps | 8A | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 80mA, 8A | |
| Collector Cutoff Max | 50µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 3A, 4V | |
| Maximum Power Handling | 2W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current 50µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 8A. Offers a collector cutoff current rated at 50µA. Features a DC current gain hFE at Ic evaluated at 2.5V @ 80mA, 8A. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 2W for device protection. Type of transistor PNP - Darlington for circuit architecture. Peak Vce(on) at Vge 2.5V @ 80mA, 8A for transistor parameters. Highest collector-emitter breakdown voltage 60V.
