Attribute
Description
Manufacturer Part Number
STU13005N
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
3A,
400V
Note :
GST will not be applied to orders shipping outside of India
Stock: 1
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 76.54 | ₹ 76.54 |
| 10 | ₹ 32.93 | ₹ 329.30 |
| 100 | ₹ 28.48 | ₹ 2,848.00 |
| 500 | ₹ 24.03 | ₹ 12,015.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 3A | |
| Max Collector-Emitter Breakdown | 400V | |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 750mA, 3A | |
| Collector Cutoff Max | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V | |
| Maximum Power Handling | 30W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-251-3 Short Leads, IPak, TO-251AA |
Description
Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 3A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 5V @ 750mA, 3A. Mounting style Through Hole for structural integrity. Enclosure/case TO-251-3 Short Leads, IPak, TO-251AA providing mechanical and thermal shielding. Peak power 30W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 5V @ 750mA, 3A for transistor parameters. Highest collector-emitter breakdown voltage 400V.
