L6221AS

L6221AS
Attribute
Description
Manufacturer Part Number
L6221AS
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
55 weeks

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Product Attributes

Type Description
Category
Transistor Class 4 NPN Darlington (Quad)
Maximum Collector Amps 1.8A
Max Collector-Emitter Breakdown 50V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 1.8A
Collector Cutoff Max -
DC Current Gain (hFE) (Min) @ Ic, Vce -
Maximum Power Handling 1W
Transition Freq -
Attachment Mounting Style Through Hole
Component Housing Style -

Description

Provides a maximum collector current (Ic) of 1.8A. Features a DC current gain hFE at Ic evaluated at 1.6V @ 1.8A. Mounting style Through Hole for structural integrity. Peak power 1W for device protection. Type of transistor 4 NPN Darlington (Quad) for circuit architecture. Peak Vce(on) at Vge 1.6V @ 1.8A for transistor parameters. Highest collector-emitter breakdown voltage 50V.

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