Attribute
Description
Manufacturer Part Number
BFX34
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
5A,
60V
Manufacturer Lead Time
55 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 5A | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 500mA, 5A | |
| Collector Cutoff Max | 10µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2A, 2V | |
| Maximum Power Handling | 870mW | |
| Transition Freq | 100MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-205AD, TO-39-3 Metal Can |
Description
Measures resistance at forward current 10µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 5A. Offers a collector cutoff current rated at 10µA. Features a DC current gain hFE at Ic evaluated at 1V @ 500mA, 5A. Offers 100MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-205AD, TO-39-3 Metal Can providing mechanical and thermal shielding. Peak power 870mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 1V @ 500mA, 5A for transistor parameters. Highest collector-emitter breakdown voltage 60V.
